发明名称 |
Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same |
摘要 |
A method of making a bi-directional transient voltage suppression device is provided, which comprises: (a) providing a p-type semiconductor substrate; (b) epitaxially depositing a lower semiconductor layer of p-type conductivity; (c) epitaxially depositing a middle semiconductor layer of n-type conductivity over the lower layer; (d) epitaxially depositing an upper semiconductor layer of p-type conductivity over the middle layer; (e) heating the substrate, the lower epitaxial layer, the middle epitaxial layer and the upper epitaxial layer; (f) etching a mesa trench that extends through the upper layer, through the middle layer and through at least a portion of the lower layer, such that the mesa trench defines an active area for the device; and (g) thermally growing an oxide layer on at least those portions of the walls of the mesa trench that correspond to the upper and lower junctions of the device.
|
申请公布号 |
US6858510(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030422138 |
申请日期 |
2003.04.24 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
EINTHOVEN WILLEM G.;GINTY ANTHONY;WALSH AIDAN |
分类号 |
H01L21/329;H01L27/02;H01L29/861;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/329 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|