发明名称 TRANSISTOR AND ITS FABRICATION PROCESS, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To increase an area of a screen by contriving the arrangement of a gate electrode and a gate wiring of an active matrix semiconductor device. SOLUTION: A gate electrode included in a pixel TFT provided in a display region is formed of a first conductive layer. Gate wiring provided in the display region is formed of a second conductive layer. The gate electrode comes into electrical contact with the gate wiring at a joint. The joint is provided on the outside of a semiconductor layer included in the pixel TFT. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006157052(A) 申请公布日期 2006.06.15
申请号 JP20060050503 申请日期 2006.02.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;TAKAYAMA TORU;HAMAYA TOSHIJI
分类号 H01L29/786;H01L21/28;H01L21/3205;H01L23/52;H01L29/423;H01L29/49 主分类号 H01L29/786
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