发明名称 |
TRANSISTOR AND ITS FABRICATION PROCESS, AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To increase an area of a screen by contriving the arrangement of a gate electrode and a gate wiring of an active matrix semiconductor device. SOLUTION: A gate electrode included in a pixel TFT provided in a display region is formed of a first conductive layer. Gate wiring provided in the display region is formed of a second conductive layer. The gate electrode comes into electrical contact with the gate wiring at a joint. The joint is provided on the outside of a semiconductor layer included in the pixel TFT. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006157052(A) |
申请公布日期 |
2006.06.15 |
申请号 |
JP20060050503 |
申请日期 |
2006.02.27 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;TAKAYAMA TORU;HAMAYA TOSHIJI |
分类号 |
H01L29/786;H01L21/28;H01L21/3205;H01L23/52;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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