发明名称 ION-BEAM SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an ion-beam sputtering apparatus which prevents a scattered material in a pre-sputtering step from depositing on a substrate to be film-formed. SOLUTION: The ion-beam sputtering apparatus for forming a film on the substrate 22 by sputtering a target 21 fixed on a target holder 15 through irradiating the target with an ion beam 31 projected from a film-forming ion gun 12 and depositing the sputtered particles on the substrate comprises: a rotating mechanism installed on a target holder 15 for the purpose of rolling over the target so that the direction of the surface can be reversed from a film-forming state; a pre-sputtering ion gun 41 arranged so that the irradiation axis can direct the irradiation axis of the film-forming ion gun 12 symmetrically with respect to a rotating shaft 43 of the rotating mechanism; and a shielding plate 42 which surrounds the surface of the reversed target, and prevents the scattering of particles sputtered from the surface of the target of a reversed state by an ion beam 51 projected from the pre-sputtering ion gun 41. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006225713(A) 申请公布日期 2006.08.31
申请号 JP20050040418 申请日期 2005.02.17
申请人 JAPAN AVIATION ELECTRONICS INDUSTRY LTD 发明人 MACHIDA HARUMASA
分类号 C23C14/46 主分类号 C23C14/46
代理机构 代理人
主权项
地址