| 摘要 |
Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28 B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern 28 B has a main light transferring pattern 26 c 1 , a plurality of auxiliary light transferring patterns 26 c 2 disposed thereabout, and a phase shifter S disposed in the main light transferring pattern 26 c 1 . The auxiliary light transferring patterns 26 c 2 are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern 26 c 1 are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin. |
