SEMICONDUCTOR DEVICE HAVING A VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

A vertical channel semiconductor device and its manufacturing method are provided to reduce remarkably the leakage current due to the GIDL(Gate Induced Drain Leakage) phenomenon by forming source/drain regions of an LDD(Lightly Doped Drain) structure under a gate structure with a vertical channel region and to increase effectively the area of the channel region by using a protection pattern as a mask. A vertical channel semiconductor device includes a gate structure and source/drain regions of an LDD structure. The gate structure(170) is formed on a substrate(100). The gate structure is composed of a channel region(150) with a recess(145) at a side portion, a gate electrode(160) for filling the recess, and a gate insulating layer(155) between the channel region and the gate electrode. The source/drain regions(180) are formed in the substrate under the gate structure. The gate structure further includes a protection pattern(135) at an upper sidewall of the channel region, a buffer oxide pattern(120) on the channel region and the protection pattern, and a mask pattern(125) on the buffer oxide pattern.