| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing the surface layer of a silicon wafer capable of removing the surface layer of the silicon wafer by a dry process without using a solution nor requiring mechanical polishing operation and cleaning after the process, repeatedly using a silicon substrate even after performing reclaiming/removing processes many times, and contriving the effective use of the silicon substrate. SOLUTION: A negative plate 3 is arranged in a vacuum vessel 1, and a silicon wafer 1 with the surface layer 1a of an SiN film having a thickness of 200 nm attached is placed on the negative plate 3. A CF<SB>4</SB>gas of 4.7 CCM is introduced into the vacuum vessel 1, and the inside of the vacuum vessel 1 is kept at 3 mtorr. An output power of 200 W is applied on an RF power supply 5b at a magnetic flux density of 300 gauss, and etching is performed for 10 minutes. COPYRIGHT: (C)2007,JPO&INPIT
|
