| 摘要 |
PROBLEM TO BE SOLVED: To layout a power amplification heterojunction bipolar transistor for large output power in a small area. SOLUTION: The heterojunction bipolar transistor is formed by arranging a plurality of transistor elements in an array in the long side direction of emitter on a sub-collector layer while spacing apart the collector layers from each other. Furthermore, a multi-finger heterojunction bipolar transistor is constituted using the heterojunction bipolar transistor as a unit transistor. COPYRIGHT: (C)2007,JPO&INPIT
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