发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit effectively makes use of wiring channels of wiring formed by a damascene method. When first cells are used, since the M 1 power source lines are laid out at positions spaced away from a boundary between the cells, the power source lines are not combined in laying out a semiconductor integrated circuit. As a result, the width of the power source lines is not changed. Accordingly, an interval between the line and a line which is arranged close to the line, determined in response to a line width of the lines, can satisfy a design rule; and, hence, the reduction of the wiring channels can be obviated, whereby the supply rate of the wiring channels can be enhanced, and, further, the integrity of a semiconductor chip can be enhanced.
申请公布号 US7365376(B2) 申请公布日期 2008.04.29
申请号 US20060520622 申请日期 2006.09.14
申请人 RENESAS TECHNOLOGY CORP. 发明人 OHAYASHI MASAYUKI;YOKOI TAKASHI
分类号 H01L21/3205;H01L27/10;H01L21/82;H01L21/822;H01L23/52;H01L27/02;H01L27/04;H01L27/118;H01L29/73;H01L31/0328 主分类号 H01L21/3205
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