发明名称 Non-volatile semiconductor memory device
摘要 When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.
申请公布号 US7403436(B2) 申请公布日期 2008.07.22
申请号 US20060453926 申请日期 2006.06.16
申请人 发明人
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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