PRODUCTION OF A TRANSISTOR GATE ON A MULTIBRANCH CHANNEL STRUCTURE AND MEANS FOR ISOLATING THIS GATE FROM THE SOURCE AND DRAIN REGIONS

摘要

A device has an etched thin-film multilayer comprising two blocks (210, 230) resting on a substrate (200) in which source and drain regions are formed, respectively. Semiconductor bars (220a, 220b) connecting a zone of one block to another zone of another block form a multi-branch transistor channel. A gate surrounding the bars is located between the blocks and is contact with insulating spacers (237a, 237b) in contact with the walls of the blocks. The gate is separated from the blocks by the insulating spacers. An independent claim is also included for forming a microelectronic device.