| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile information recording and reproducing device having high recording density and low power consumption. SOLUTION: The device is provided with a laminated structure having electrode layers 11, 13A and a recording layer 12, a buffer layer 10 added to the electrode layer, and a voltage applying part recording information by applying voltage and phase-transiting the recording layer, wherein the recording layer is ilmenite structure expressed by A<SB>x</SB>M<SB>y</SB>X<SB>3</SB>(0.1≤x≤1.1, 0.75≤y≤1), and has a first layer containing a first compound in which at least either of A and M is a transition element having (d) orbit filled incompletely by electrons, and A is an element including at least any of elements selected from a group consisting of Be, Mg, Fe, Co, Ni, Cu, Zn, and M is an element including at least any of elements selected from a group consisting of Ti, Ge, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, Ru, Rh, and X is an element including at least any of elements selected from a group consisting of O (oxygen) and N (nitrogen). COPYRIGHT: (C)2009,JPO&INPIT |
