| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to improve a body effect and to prevent a punch through and a DIBL(Drain Induced Barrier Lowering) by forming a recess gate with an insulating film having a bird beak profile. A semiconductor substrate(100) is provided. A mask pattern is formed on the semiconductor substrate. An insulating film pattern(122) having a bird beak profile is formed on the semiconductor substrate exposed between the mask patterns. An epitaxial layer(130) is formed on the semiconductor substrate exposed by the insulating film pattern in order to fill the insulating film pattern inside the epitaxial layer. A recess gate(190) is formed in order to position a recess channel between the insulating film patterns. A size of the insulating film pattern overlapped with the recess gate is smaller than 1/2 of width of the recess gate.</p> |
