| 摘要 |
PURPOSE:To provide a semiconductor light emitting element where the injection efficiency of holes is high and the operation voltage is low. CONSTITUTION:In growing a wide band gap p-ZnSe clad layer 3 o a p-type GaAs substrate 1, a (AlxGa1-x) yIn1-yP buffer layer 2 where the band gap is larger than the substrate 1 and smaller than the wide gap p-ZnSe clad layer 3, is inserted between both. Hereby, the band discontinuity between the substrate 1 and the clad layer 3 is relaxed, and the injection into the clad layer 3 of holes is performed smoothly, and the operation voltage is relaxed. |
