| 发明名称 | Methods to form conductive thin film structures | ||
| 摘要 | Electrically conductive structures and methods of making electrically conductive structures. The methods include providing a dielectric layer of a material having a top surface and a dielectric constant of less than 3; rastering a gas cluster ion beam to form a patterned modified surface region of the top surface of the dielectric layer; and selectively forming an electrically conductive thin film on the patterned modified surface region using atomic layer deposition. | ||
| 申请公布号 | US9362230(B1) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201514722302 | 申请日期 | 2015.05.27 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Clevenger Lawrence A.;McGahay Vincent J.;Nag Joyeeta;Xu Yiheng |
| 分类号 | H01L21/265;H01L23/532;H01L21/285;H01L21/3213;H01L21/768;H01L23/528 | 主分类号 | H01L21/265 |
| 代理机构 | Thompson Hine LLP | 代理人 | Thompson Hine LLP |
| 主权项 | 1. A method comprising: providing a dielectric layer of a material having a top surface and a dielectric constant of less than 3; rastering a gas cluster ion beam to form a patterned modified surface region of said top surface of said dielectric layer; and selectively forming an electrically conductive thin film on said patterned modified surface region using atomic layer deposition. | ||
| 地址 | Grand Cayman KY | ||