Field plate configuration of a semiconductor device

摘要

A semiconductor device includes a semiconductor substrate having a principal surface, and an insulating film formed on the principal surface and continuously covering a top surface of a first boundary region and a top surface of a second boundary region, the first boundary region including a boundary between a well layer and a RESURF layer, the second boundary region including a boundary between the RESURF layer and a first impurity region. The semiconductor device further includes a plurality of lower field plates formed in the insulating film in such a manner that the plurality of lower field plates do not lie directly above the first and second boundary regions, and a plurality of upper field plates formed on the insulating film in such a manner that the plurality of upper field plates do not lie directly above the first and second boundary regions.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a principal surface; a first impurity region of a first conductivity type formed in said semiconductor substrate; a RESURF layer of a second conductivity type formed in said semiconductor substrate along said principal surface; a well layer of said second conductivity type formed in said semiconductor substrate adjacent said RESURF layer and along said principal surface; a channel stopper of said first conductivity type formed in said semiconductor substrate adjacent said RESURF layer and along said principal surface, with said first impurity region interposed between said channel stopper and said RESURF layer; an insulating film formed on said principal surface and continuously covering a top surface of a first boundary region and a top surface of a second boundary region, said first boundary region including a first boundary between said well layer and said RESURF layer, said second boundary region including a second boundary between said RESURF layer and said first impurity region and facing said channel stopper; a plurality of lower field plates formed in said insulating film in such a manner that no lower field plate lies directly above said first boundary and no lower field plate lies directly above said second boundary; an emitter electrode formed in contact with said well layer and extending over a top surface, opposite the principal surface, of said insulating film directly above said first boundary; and a channel stopper electrode formed in contact with said channel stopper and extending over a top surface, opposite the principal surface, of said insulating film directly above said second boundary, wherein the channel stopper electrode is not in direct contact with any lower field plate.