| 发明名称 | Passing access line structure in a memory device | ||
| 摘要 | A method for memory device fabrication includes forming a plurality of continuous fins on a substrate. An insulator material is formed around the fins. The continuous fins are etched into segmented fins to form exposed areas between the segmented fins. An insulator material is formed in the exposed areas wherein the insulator material in the exposed areas is formed higher than the insulator material around the fins. A metal is formed over the fins and the insulator material. The metal formed over the exposed areas is formed to a shallower depth than over the fins. | ||
| 申请公布号 | US9349737(B2) | 申请公布日期 | 2016.05.24 |
| 申请号 | US201414511371 | 申请日期 | 2014.10.10 |
| 申请人 | Micron Technology, Inc. | 发明人 | Pulugurtha Srinivas;Dhir Sourabh;Gupta Rajesh N.;Tang Sanh D.;Lee Si-Woo;Liu Haitao |
| 分类号 | H01L27/105;H01L27/108;G11C11/407 | 主分类号 | H01L27/105 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. A method for fabricating a memory device, the method comprising: forming a plurality of continuous fins on a substrate; forming an insulator material around the fins; segmenting the continuous fins into segmented fins to form exposed areas between the segmented fins; forming an insulator in the exposed areas wherein the insulator in the exposed areas is formed higher than the insulator material around the fins; and forming a metal over the fins and the insulator material. | ||
| 地址 | Boise ID US | ||