Semiconductor device

摘要

A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

主权项

1. A semiconductor device comprising:
a first conductive portion on a first side of a shallow trench isolation (STI) region, the first conductive portion formed within a well having a first conductivity type, the first conductive portion having a second conductivity type and connected to a first nanowire and at least one of an input output (I/O) port, a first voltage supply (VDD), or a second voltage supply (VSS); and a second conductive portion on a second side of the STI region, the second conductive portion formed within the well and having the second conductivity type, the second conductive portion connected to a second nanowire and at least one of:
the VSS or the VDD when the first conductive portion is connected to the I/O port;the VSS when the first conductive portion is connected to the VDD; orthe VDD when the first conductive portion is connected to the VSS.