| 发明名称 | Plasma etching method and plasma etching apparatus | ||
| 摘要 | A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times. | ||
| 申请公布号 | US9349574(B2) | 申请公布日期 | 2016.05.24 |
| 申请号 | US201314414946 | 申请日期 | 2013.08.05 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Yoshida Ryoichi;Ishii Takayuki;Kobayashi Ken |
| 分类号 | C03C15/00;H01J37/32;H01L21/027;H01L21/311 | 主分类号 | C03C15/00 |
| 代理机构 | Pearne & Gordon LLP | 代理人 | Pearne & Gordon LLP |
| 主权项 | 1. A plasma etching method comprising: a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern and is formed on a target object, with plasma generated from a hydrogen-containing gas; and an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask, wherein each of the plasma process and the etching process is repeated at least two or more times. | ||
| 地址 | Tokyo JP | ||