Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory

摘要

Two or more workload indicators affecting a memory cell of a resistance-based, non-volatile memory are measured. The two or more workload indicators are applied to a transfer function that predicts a resistance shift and/or resistance noise variance in response to the two or more workload indicators. A result of the transfer function is applied to shift and/or determine a threshold resistance used for at least one of a program operation and a read operation affecting the memory cell. An error rate of the memory cell is reduced as a result.

主权项

1. A method comprising:
reading a reference memory block in one of a plurality of regions of a resistance-based, non-volatile memory, the reference memory block storing a known data pattern; determining, based on reading the reference memory block, a transfer function that predicts a resistance shift of the region of the resistance-based, non-volatile memory in response to two or more workload indicators; measuring the two or more workload indicators during operation of the resistance-based, non-volatile memory; applying the two or more workload indicators to the transfer function; and applying a result of the transfer function to shift a threshold resistance used for at least one of a program operation and a read operation affecting a memory cell within the region and separate from the reference memory block, the shift reducing an error rate of the memory cell.