发明名称 |
Method and system for programming multi-level cell memory |
摘要 |
A method and a system for programming a multi-level cell (MLC) memory are provided. A first count is 1 initially. The method comprises the following steps. A first energy is set. The first energy is applied to alter a resistance of a cell of the MLC memory. The first count is increased by 1 after performing the step of applying the first energy. In the step of setting the first energy, the first energy is;afirstinitialenergyapredeterminedvalue
initially and the first energy is changed by increasing or decreasing
;thefirstinitialenergythepredeterminedvaluethefirstcount. |
申请公布号 |
US9349443(B2) |
申请公布日期 |
2016.05.24 |
申请号 |
US201414210532 |
申请日期 |
2014.03.14 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Khwa Win-San;Wu Chao-I |
分类号 |
G11C11/56 |
主分类号 |
G11C11/56 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A method for programming a multi-level cell (MLC) memory, wherein a first count is 1 initially, and the method comprises:
setting a first energy; applying the first energy to alter a resistance of a cell of the MLC memory; and increasing the first count by 1 after performing the step of applying the first energy; wherein in the step of setting the first energy, the first energy isafirstinitialenergyapredeterminedvalueinitially, the first energy is changed by increasing or decreasingthefirstinitialenergythepredeterminedvaluethefirstcount,wherein the predetermined value is larger than 1. |
地址 |
Hsinchu TW |