Semiconductor device

摘要

An intermediate mode is set between the active mode in which a threshold voltage is low and a standby mode in which a threshold voltage is high. When a mode is shifted from the active mode to the standby mode, the threshold voltage for the active mode is raised temporarily to a threshold voltage for the intermediate mode and then the threshold voltage for the intermediate mode is raised to the threshold voltage for the standby mode. When a mode is shifted from the standby mode to the active mode, the threshold voltage for the standby mode is lowered temporarily to the threshold voltage for the intermediate mode and then the threshold voltage for the intermediate mode is lowered to the threshold voltage for the active mode.

主权项

1. A semiconductor device comprising a memory circuit including a memory cell having a first field-effect transistor of a first conductive type and a second field-effect transistor of a second conductive type different from the first conductive type,
wherein the memory cell has: an active mode in which the first field-effect transistor is activated by a first threshold voltage and the second field-effect transistor is activated by a second threshold voltage; and a standby mode in which the first field-effect transistor is activated by a third threshold voltage higher than the first threshold voltage and the second field-effect transistor is activated by a fourth threshold voltage higher than the second threshold voltage, and when a mode is shifted from the active mode to the standby mode, a threshold voltage of the first field-effect transistor is shifted temporarily from the first threshold voltage to a fifth threshold voltage between the first threshold voltage and the third threshold voltage, and a threshold voltage of the second field-effect transistor is shifted temporarily from the second threshold voltage to a sixth threshold voltage between the second threshold voltage and the fourth threshold voltage.