发明名称 Electron beam lithography methods including time division multiplex loading
摘要 An embodiment of a method of lithography includes generating a beam of electrons. A first pixel and a second pixel are each configured to pattern the beam. Using time domain multiplex loading, the first and second pixels are controlled such that the beam is patterned. The patterning includes receiving a first clock signal and using the first clock signal to generate a second clock signal and a third clock signal. The second clock signal is sent to the first pixel and sending the third clock signal is sent to the second pixel.
申请公布号 US9378926(B2) 申请公布日期 2016.06.28
申请号 US201514604488 申请日期 2015.01.23
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Kuo Ming-Zhang;Yang Ping-Lin;Lin Cheng-Chung;Takahashi Osamu;Dhong Sang Hoo
分类号 G21K5/04;H01J37/317;H01J37/302 主分类号 G21K5/04
代理机构 Hayne and Boone, LLP 代理人 Hayne and Boone, LLP
主权项 1. A method of lithography, comprising: generating a beam of electrons; providing a first pixel and a second pixel each configured to pattern the beam; using time domain multiplex loading to control the first and second pixels in patterning the beam, wherein the use of time domain multiplex loading includes: receiving a first clock signal;using the first clock signal to generate a second clock signal and a third clock signal; andsending the second clock signal to the first pixel and sending the third clock signal to the second pixel.
地址 Hsin-Chu TW