| 摘要 |
1,251,348. Integrated circuits. SONY CORP 3 Dec., 1968 [5 Dec., 1967], No. 57278/68. Heading H1K. An integrated circuit assembly comprises a semi-conductor layer vapour deposited on a monocrystalline semi-conductor substrate, the layer including monocrystalline regions electrically isolated by a high resistivity polycrystalline region. The monocrystalline regions may be isolated from the substrate by PN junctions. In one example an apertured oxide mask is formed over a P type silicon wafer by standard techniques and donor dopant diffused through the holes prior to the vapour deposition step. During deposition of intrinsic semi-conductor material outward diffusion occurs to render the monocrystalline islands above the holes N type. Subsequently device configurations e.g. transistors are formed by diffusion through oxide masking and are interconnected and joined to vapour deposited passive components by vapour depositing and etch shaping aluminium. In other embodiments diffused regions are formed under only some of the islands, or selected islands are doped throughout after deposition by inward diffusion. In yet another embodiment N+ diffusion regions are formed beneath all of the islands and P + regions diffused into some of these. In this case outward diffusion during deposition provides islands of opposite conductivity types in which complementary transistors are formed by successive diffusions. Instead of using oxide to form seeding sites for growth of polycrystalline material it is possible to use predeposits of polycrystalline material or to abrade parts of the surface. |
