| 摘要 |
1,025,135. Circuits employing bi-stable magnetic elements. RADIO CORPORATION OF AMERICA. Feb. 19, 1965 [March 5, 1964], No. 7352/65. Heading H3B. [Also in Division G4] In an arrangement for selecting a word line in a magnetic core matrix memory, each word line such as L 11 is connected at one end to a charge storage diode such as d 11 , the other end of the word line being connected to the collector of a transistor such as T 11 . The charge storage diodes d 11 -d 22 are connected to a common bus z. In operation, a word is read out destructively by selecting a transistor T 11- T 22 by applying appropriate voltages to the row and column lines connected to its emitter and base respectively thereby causing a read pulse to flow along the selected word line. The word read-out is detected by sense windings 10 only one of which is shown. The charge storage diode of the selected word line now stores a charge so that the subsequent application of a write pulse from a driver W to the common bus z is effective in only the selected word line to restore the data read-out or write new data in, in conjunction with appropriate voltages on digit drivers such as DD. The arrangement has the advantage that word selection voltages are isolated from all word lines except the selected word line. |
