| 摘要 |
1,183,967. Semi-conductor devices. R.C.A. CORPORATION. 20 Sept., 1967 [13 Oct., 1966], No. 42755/67. Heading H1K. An insulated gate field effect tetrode device comprising low resistivity source and drain regions 13, 14, an intermediate low resistivity region 15 and insulated gate electrodes 22, 23 over the spaces between the intermediate region and the regions 13, 14, is characterized in that the width of contact of each of the electrodes 20, 21 with the respective region 13, 14 is less than the width of the region, the width of each of the electrodes 22, 23 where it overlies the respective space is not greater than the width of the space, and the width of the intermediate region is less than 0À64 mils. The regions may be of various shapes, for example rectangular, U-shaped (Fig. 3, not shown), X-shaped (Fig. 4, not shown), or circular, and may partly or wholly surround one another. In a modification (Fig. 5, not shown) two or more intermediate regions each less than 0À64 mils wide are provided, together with three or more insulated gate electrodes. The semi-conductor body may consist of germanium, silicon, the nitrides, phosphides, arsenides or antimonides of boron, aluminium, indium or gallium, the sulphides, selenides or tellurides of zinc, cadmium or mercury, or alloys of these materials, and the low resistivity regions are formed by diffusing an impurity such as arsenic, antimony or phosphorus through a masking layer of silicon oxide, silicon nitride or silicon oxynitride. The mask is removed, a dielectric layer 19 consisting of silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, magnesium oxide, magnesium fluoride, titanium carbide, titanium oxide, titanium nitride, hafnium oxide, vanadium oxide or aluminium oxide is deposited on the face of the body, windows are formed over the regions 13, 14, and aluminium, palladium or chromium is deposited to form electrodes 20, 21, 22, 23. |
