| 摘要 |
A light conversion element used for a vidicon image pickup target characterized in that an amorphous semiconductor comprising more than 50 atomic percent of selenium and/or sulfur is disposed directly on a IVa group silicon, germanium or similar semiconductor single crystal or crystalline layer, or on such a semiconductor single crystal or crystalline layer with a very thin insulation layer, such as a very thin oxide layer interposed therebetween whereby a hetero-junction is formed in the element.
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