Single crystal ribbon pulling from fused semiconductor material - through orifice in salt bath to reduce surface tension

摘要

Single-crystal ribbons can be pulled from fused semi-conductor material by means of a seed crystal through an orifice. The orifice is arraned in a diaphragm above the m olten material, and after emerging from the orifice the ribbon is pulled through a salt bath above the diaphragm which reduces the surface tension of the fused semiconductor material. This avoids the sawing and lapping losses when modules of large diameters are prepared from thick pulled bars. The modules produced for integrated circuits or solar cells have a perfect quality and dopant concn. The subsequent processing steps are also simplified.