SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

The semiconductor memory comprises a first memory cell which has first and second active regions formed on its upper side and lower side, resp.; first and second word lines which are vertically extended to the adjacent memory cells on the right and left sides of the memory cell; first and second driving transistor gates formed in the memory cell for each of the first and second memory word lines; a first power line inter connecting the second active region with the first active region; second and third power lines arranged in parallel to the word lines and the gates of the driving transistors; a first node connected to the second power line and a second node connected to the third power line; a third node connected to the first node and formed in intersection with the nodes and a fourth node connected transversely to the second node; and first and second bit lines arranged in the upper and lower sides of the memory cells, respectively.