| 摘要 |
PURPOSE:To obtain the high bonding strength between leading electrodes formed on a nitride layer of transition metal such as Ti or the like by forming the layer on an SiO2 film. CONSTITUTION:An SiO2 film 1 is formed on an Si substrate 5, and a Ti nitride layer 9, a Pt layer 7 and an Au layer 8 are laminated with externally connecting electrodes on the film 1. In the layer 9, N2 and Ar of low pressure are mixed at a ratio of 1:5, the Ti is accumulated by reactive sputtering, the layers 7, 8 are deposited, patterned, and leading electrodes of the layers 9, 7, 8 are formed. A PtSi layer 12 is formed on the electrode forming parts of a base 10 and an emitter 11. According to the configuration, the formation of an Si3N4 film which has good bondability with the Ti can be eliminated under the leading electrode as the conventional one, and the leading electrode which has high bonding strength with the base SiO2 film can be obtained. |
