| 摘要 |
PURPOSE:To improve resistance to corona ions, solvents, light fatigue, humidity, heat, and abrasion, and cleanability by forming a photoconductive layer having a photosensitive surface layer of a coat composed essentially of amorphous silicon carbide. CONSTITUTION:An amorphous silicon carbide film 3 is formed by the CVD method on a substrate 2 of a metal or its alloy, such as stainless steel, to form a photosensitive body 1. This layer may be further coated with a plastic film, sheet, glass, or ceramic layer treated to make it conductive. Said body 1 is usually formed into a cylinder, belt, plate, or the like, and the photoconductive layer 3 formed on the substrate 2 is made of silicon carbide by the plasma CVD layer preferably contg. 5-40 atomic % H, and the layer 3 can be optionally controlled in conductivity by adding impurity for converting it into an n or p type. |
