| 摘要 |
PURPOSE:To control the temperature of a substrate in etching, film formation, baking treatment, etc. of a semiconductor device properly by bringing a distance between a susceptor for the substrate and the substrate to the mean free path or less of gas introduced under the pressure of the gas. CONSTITUTION:A substrate 19 is placed on a lower electrode 17 with a convex surface abraded to roughness of 6-S or less by a holding means 23. A distance between two surfaces is made sufficiently smaller than a mean free path of 30mum in 700Pa pressure of helium as the gas for heat transfer extending over the whole surface at that time. Helium gas is fed by an orifice 21 from a gas reservoir 26. The lower electrode 17 and the substrate 19 are disposed in a treating chamber 12 together with an upper electrode 16, and a gas introducing port 24 and an exhaust port 13 for feeding and discharging a reaction gas are formed.
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