发明名称 |
SEMICONDUCTOR LASER HAVING HIGH MANUFACTURING YIELD |
摘要 |
<p>SEMICONDUCTOR LASER HAVING HIGH MANUFACTURING YIELD A semiconductor laser wherein the major surface of a substrate having a pair of channels therein is misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2.degree. and 1.5.degree.. The misorientation angle of the substrate surface with respect to the axis of the channels is between about 5.degree. and 45.degree..</p> |
申请公布号 |
CA1212171(A) |
申请公布日期 |
1986.09.30 |
申请号 |
CA19830437583 |
申请日期 |
1983.09.26 |
申请人 |
RCA CORPORATION |
发明人 |
CONNOLLY, JOHN C.;BOTEZ, DAN |
分类号 |
H01S5/223;(IPC1-7):H01S3/18 |
主分类号 |
H01S5/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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