发明名称 SEMICONDUCTOR LASER HAVING HIGH MANUFACTURING YIELD
摘要 <p>SEMICONDUCTOR LASER HAVING HIGH MANUFACTURING YIELD A semiconductor laser wherein the major surface of a substrate having a pair of channels therein is misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2.degree. and 1.5.degree.. The misorientation angle of the substrate surface with respect to the axis of the channels is between about 5.degree. and 45.degree..</p>
申请公布号 CA1212171(A) 申请公布日期 1986.09.30
申请号 CA19830437583 申请日期 1983.09.26
申请人 RCA CORPORATION 发明人 CONNOLLY, JOHN C.;BOTEZ, DAN
分类号 H01S5/223;(IPC1-7):H01S3/18 主分类号 H01S5/223
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