| 摘要 |
PURPOSE:To realize monolithic integration reasonably and easily by a method wherein same epitaxial growth layers are employed as the base layer of a differential negative resistance element and the channel layer of a field-effect transistor element. CONSTITUTION:A required semiconductor layer is built up on a semiconductor substrate 1 by epitaxial growth and a part of the semiconductor layer is selectively removed. The emitter electrode 11 of a differential negative resistance element which has an ohmic contact with the region of the semiconductor layer not selectively removed and the gate electrode 14 of a field-effect transistor element which has a Schottky contact with the semiconductor layer exposed by removing selectively are composed of metal layers of the same material. Further, the base electrode 12 of the differential negative resistance element and the source and drain electrodes 15s and 15d of the field-effect transistor element which have ohmic contacts with mutually the same semiconductor layers are composed of metal layers of the same material. With this constitution, monolithic integration can be realized reasonably and easily. |
