| 摘要 |
A very high frequency oscillator (4-22 GHz) including field effect transistor and first and second YIG sphere resonators whose reactant frequencies are displaced, which gives the oscillator a wide frequency range. The first YIG sphere is doubly coupled to the source and gate of the transistor, which gives the oscillator good linearity ( &persp& 10-3) over its frequency range. The second YIG sphere is coupled to the gate by a coupling wire which also couples to the first YIG sphere. |
