| 摘要 |
PURPOSE:To obtain the indication element suitable for the indicating device using a number of light-emitting diodes by a method wherein a p-type semiconductor, an n-type semiconductor and an i-type semiconductor are stacked in the order of p1, n1, p2, i and n2, or in the order of p1, n1, p2 and n2, an electrode is provided on the p1 layer and the n2 layer, and besides, a gate electrode is provided on the n1 layer and/or the p2 layer. CONSTITUTION:The title memory holding type light-emitting diode is provided with a p-type semiconductor, an n-type semiconductor and an i-type semiconductor stacked in the order of p1, n1, p2, i and n2, or p1, n1, P2, and n2, and an electrode provided on the p1 layer and the n2 layer, and besides, a gate electrode provided on the n1 layer and/or the p2 layer. A P2in2 junction and a p2n2 junction of the light-emitting diode function as a light-emitting diode. Also, the (i) layer has the functioning such as increasing luminous efficiency and the like in the same manner as the pin-type light-emitting diode heretofore in use. Also, the gate electrode provided on the n1 layer and/or the p2 layer performs the function of controlling the current, flowing between the p1 layer and the n3 layer, and luminous quantity. |
