| 摘要 |
A process for obtaining extremely smooth interfaces of poly 1/inter-level dielectric film/poly 2 films. Essentially, the poly 1 layer is LPCVD-deposited in the amorphous phase and implant-doped, after which an appropriate dielectric film is deposited by LPCVD. Following this, the poly 1 is crystallized at a temperature of about 1000 DEG C., after which poly 2 is LPCVD-deposited and POCl3-doped at 950 DEG C. The resulting poly 2/inter-level dielectric/poly 1 interfaces are extremely smooth on an atomic scale, even after other device fabrication thermal cycles, and are believed to resutl in superior leakage characteristics.
|
