Intermetallic compound semiconductor thin film and method of manufacturing same

摘要

PCT No. PCT/JP87/00205 Sec. 371 Date Nov. 30, 1987 Sec. 102(e) Date Nov. 30, 1987 PCT Filed Apr. 1, 1987.An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.