Selective etching of tungsten by remote and in situ plasma generation

摘要

A thin film etching process, wherein the rate of deposition of a robust sidewall passivant is controlled so that passivants can be continually deposited on the sidewalls of the resist pattern to change the geometry of the resist pattern during the processing step. That is, the existing pattern is modified as if a sidewall filament has been deposited on it, which can be advantageous for many purposes, without the added process complexity required by a sidewall filament process.