发明名称 PATTERN INSPECTING METHOD
摘要 PURPOSE:To highly accurately inspect a pattern by using a charged particle beam after forming a conductive high polymer film on the surface or rear of a substrate to be inspected. CONSTITUTION:A conductive high polymer film 3 of polystyrene ammonium sulfoxide is rotationally applied to the whole surface of a photomask of chrome films 2 forming a pattern on a crystal glass substrate 1 to a thickness of 0.3mum, then, the photomask is heat-treated for 30 minutes at 100 deg.C. The photomask covered with the film 3 is inspected by scanning the photomask with an electron beam and detecting reflected electrons. Therefore, since electrostatic charging of incident electrons can be eliminated even when the pattern formed on the insulating plate is inspected and measured with the charged particle beam, highly accurate inspection can be carried out.
申请公布号 JPH01320421(A) 申请公布日期 1989.12.26
申请号 JP19880153270 申请日期 1988.06.21
申请人 MATSUSHITA ELECTRON CORP 发明人 WATANABE HISASHI;TODOKORO YOSHIHIRO
分类号 G01B15/00;G01N23/225;G01R31/302;H01L21/66 主分类号 G01B15/00
代理机构 代理人
主权项
地址