发明名称 ON-SITE GENERATION OF ULTRA-HIGH-PURITY BUFFERED-HF FOR SEMICONDUCTOR PROCESSING
摘要 A process for preparing ultra-high-purity buffered hydrofluoric acid on-site at a semiconductor manufacturing facility. Anhydrous ammonia is purified by scrubbing (17) in a high-pH liquor, and then combined with high-purity aqueous HF which has been purified by a similar process. The generation is monitored by a density measurement to produce an acid whose pH and buffering are accurately controlled.
申请公布号 WO9639266(A1) 申请公布日期 1996.12.12
申请号 WO1996US10388 申请日期 1996.06.05
申请人 STARTEC VENTURES, INC.;HOFFMAN, JOE, G.;CLARK, R., SCOT 发明人 HOFFMAN, JOE, G.;CLARK, R., SCOT
分类号 B01D3/00;B01D1/00;B01D3/02;B01D3/14;B08B7/04;C01B7/07;C01B7/19;C01C1/02;C01C1/16;F26B7/00;H01L21/304;H01L21/306;H01L21/311 主分类号 B01D3/00
代理机构 代理人
主权项
地址