| 摘要 |
PURPOSE: To obtain a solar cell having high efficiency in a high temp. and esp. low temp. processes by forming bump regions on a semiconductor substrate, covering them with a passivation layer, partly removing it to expose the bump regions and forming conductive contacts on the passivation material on the exposed bump regions and side faces. CONSTITUTION: An MIS inversion layer solar cell 10 comprises a semiconductor substrate 12, inversion layer 14, passivation layer 16, metal 20 and thin tunnel oxide 18 forming MIS contacts. After bump regions 24, 28 and trench-like regions 30, 32 between them are formed on the semiconductor surface, the passivation layer 16 is deposited on the entire surface. According to required area of the contact regions, the passivation layer 16 and part of the semiconductor are removed from the bump regions. A thin tunnel insulation layer 18 is formed, and the metal 20 is deposited obliquely in vacuum on the bump regions 24, 26, 28 and side faces 34, 36, 38 to form conductive contacts. |
