| 摘要 |
<p>A memory system (10) capable of being configured for optimum operation after fabrication and method of controlling the same. The system includes an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell located in one of the rows being coupled to a common word line and with each cell located in one of the columns being coupled to a common bit line. Control circuitry (19) is included for controlling memory operations, with the memory operations (16) including programming the memory cells, reading the memory cells and preferably programming the cells. A plurality of non-volatile data storage units (12A) are provided for storing control parameter data used by the controlling means for controlling the memory operations. Such control parameters may include, for example, parameters for adjusting the magnitude and duration of voltage pulses applied to the memory (10) for carrying out programming and erasing operations.</p> |
