发明名称 |
Semiconductor device having a MOS gate structure and a surface protective film and method of fabricating the same |
摘要 |
<p>There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si-H chemical bonds at the interface. <IMAGE></p> |
申请公布号 |
EP0685890(B1) |
申请公布日期 |
1999.03.03 |
申请号 |
EP19950107265 |
申请日期 |
1995.05.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YANO, MITSUHIRO;MOCHIZUKI, KOUICHI |
分类号 |
H01L21/336;H01L23/31;H01L29/06;H01L29/40;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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