发明名称 |
Method of producing silicon layer having surface controlled to be uneven or even |
摘要 |
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.
|
申请公布号 |
US5910019(A) |
申请公布日期 |
1999.06.08 |
申请号 |
US19970829358 |
申请日期 |
1997.04.02 |
申请人 |
NEC CORPORATION |
发明人 |
WATANABE, HIROHITO;HONMA, ICHIRO |
分类号 |
H01L21/285;H01L21/02;H01L21/205;H01L21/28;H01L21/822;H01L21/8242;H01L21/8244;H01L27/04;H01L27/10;H01L27/108;H01L27/11;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|