| 摘要 |
PURPOSE: A method for forming a de-coupling capacitor is provided to achieve the capacitor having a large capacitance without using a separate area by forming the de-coupling capacitor on a field oxide layer. CONSTITUTION: A filed oxide layer(101) for defining a device forming area and a device isolation area is formed on a semiconductor substrate(100). Then, a gate electrode(1) is formed on the semiconductor substrate(100). Impurities are implanted into the semiconductor substrate(100) so that source/drain areas(3,4) are formed. Then, the first interlayer dielectric(5) is formed on the resulted structure. After forming a mask pattern for exposing a part of the source area(3) on the first interlayer dielectric(5), a contact hole is formed by etching the first interlayer dielectric(5). A de-coupling capacitor is formed on the field oxide layer(100). The de-coupling capacitor has the first electrode(7') connected to a power terminal, a dielectric layer(8) which covers the first electrode(7') and the second electrode(11) which is connected to a ground terminal.
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