发明名称 |
BATCH ERASABLE NON-VOLATILE MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To deal with the storage of a memory high in rewriting frequency by executing a data writing processing on a non-use area by referring to address information in the non-use area and updating address information on the non-use area when the writing request of data is received. SOLUTION: CPU 14 has an address information storage means storing address information of a non-use area in the head sector of a BGO flash memory 11 being a collective deletion-type non-volatile memory and it executes the writing processing of data in the non-use area by referring to address information of the non-use area in a cluster when the writing request of data is given. Since the writing processing is executed by referring to address information of the non-use area, data can be written without collectively deleting the cluster. When a data writing error occurs, cluster ID where the writing error occurs is changed to an invalid cluster, the new cluster is obtained and a claim processing is executed. |
申请公布号 |
JP2000182381(A) |
申请公布日期 |
2000.06.30 |
申请号 |
JP19980355035 |
申请日期 |
1998.12.14 |
申请人 |
MITSUBISHI ELECTRIC CORP;MITSUBISHI DENKI SEMICONDUCTOR SYSTEM KK |
发明人 |
NAGAYOSHI HIRONAO;ISHIMOTO SHINICHI |
分类号 |
G06F12/16;G06F12/00;G06F12/02;G06F15/78;G11C16/02;G11C16/10 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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