METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of a capacitor is provided to prevent degradation of a dielectric film by flushing NH3 gas to a surface of a lower electrode without using an RTN(Rapid Thermal Nitridation). CONSTITUTION: A lower electrode made of polysilicon is formed on a semiconductor substrate(100) having transistors. A nitride layer(160) is formed on the lower electrode by flushing NH3 gas into the surface of the lower electrode at the temperature of 350- 750°C. Then, a dielectric film(170) and an upper electrode(180) are formed on the nitride layer(160). The dielectric film(170) is formed by using an ALD(Atomic Layer Deposition). Without performing an RTN using a high temperature of 800°C more than, the thermal budget is minimized, thereby preventing degradation of the dielectric film(170).