| 发明名称 |
Method for eliminating via resistance shift in organic ILD |
| 摘要 |
Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
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| 申请公布号 |
US6806182(B2) |
申请公布日期 |
2004.10.19 |
| 申请号 |
US20020137274 |
申请日期 |
2002.05.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES, AG;UNITED MICROELECTRONICS CO. |
发明人 |
RESTAINO DARRYL;SIDDIQUI SHAHAB;KALTALIOGLU ERDEM;BENNETT DELORES;LIU CHIH-CHIH;CHEN HSUEH-CHUNG;CHEN TONG-YU;YANG GWO-SHII;HSIUNG CHIUNG-SHENG |
| 分类号 |
H01L21/3205;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3205 |
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