发明名称 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor
摘要 Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
申请公布号 US6857180(B2) 申请公布日期 2005.02.22
申请号 US20020104802 申请日期 2002.03.22
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 HORNG CHENG T.;LI MIN;TONG RU-YING;LI YUN-FEI;ZHENG YOU FENG;LIAO SIMON;JU KOCHAN;HAN CHERNG CHYI
分类号 G01R33/09;G11B5/31;G11B5/39;(IPC1-7):G11B5/127;H04R31/00 主分类号 G01R33/09
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