Vertical-type power metal oxide semiconductor device with excess current protective function

摘要

In a vertical-type power metal oxide semiconductor device including a semiconductor substrate, and a plurality of transistor cells formed and arranged on the semiconductor substrate so as to be electrically connected to each other in parallel, the transistor cells are sorted into at least two groups, a first group of transistor cells featuring a gate-threshold voltage which is higher than that of a second group of transistor cells.